View TLE4206_95153.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1-A DC Motor Driver for Servo Driver Applications
TLE 4206
Overview Features * * * * * * * * * * Optimized for headlight beam control applications Current-peak-blanking (no electrolytic capacitor at VS) Delivers up to 0.8 A continuous Low saturation voltage; typ.1.2 V total @ 25 C; 0.4 A Output protected against short circuit Overtemperature protection with hysteresis Over- and undervoltage lockout No crossover current Internal clamp diodes Enhanced power packages Ordering Code Q67000-A9303 Q67006-A9299 Package P-DIP-16-5 P-DSO-14-4 P-DSO-14-4
P-DIP-16-5
Type TLE 4206 TLE 4206 G
Description The TLE 4206 is a fully protected H-Bridge Driver designed specifically for automotive headlight beam control and industrial servo control applications. The part is built using the Siemens bipolar high voltage power technology DOPL. The standard enhanced power P-DSO-14 package meets the application requirements and saves PCB-board space and costs. A P-DIP-16 package is also available. The servo-loop-parameter pos.- and neg. Hysteresis, pos.- and neg. deadband and angle-amplification are programmable with external resitors. An internal window-comparator controls the input line. In the case of a fault condition, like short circuit to GND, short circuit to supply-voltage, and broken wire, the TLE 4206 stops the motor immediately (brake condition). The "programable current-peak-blanking" disables the servo-loop during the VS voltage drop caused by the stall current spike. So there is no need of an electrolytic blocking capacitor at the VS-terminal. Furthermore the built in features like over- and undervoltage-lockout, short-circuitprotection and over-temperature-protection will open a wide range of automotive- and industrial applications.
Semiconductor Group 1 1998-02-01
TLE 4206
P-DSO-14-4
FB 1 2 3 4 5 6 7 8
P-DIP-16-5
16 15 14 13 12 11 10 9
AEP02262
REF RANGE N.C. GND GND GND OUT2
FB HYST GND GND GND OUT1 CPB
1 2 3 4 5 6 7
14 13 12 11 10 9 8
AEP02261
REF RANGE GND GND GND OUT2 VS
HYST N.C. GND GND GND OUT1 CPB
VS
Figure 1
Pin Configuration (top view)
Pin Definitions and Functions Pin No. P-DSO-14-4 1 2 3, 4, 5, 10, 11, 12 6 7 8 9 13 14 Pin No. P-DIP-16-5 1 2 4, 5, 6, 11, 12, 13 7 8 9 10 15 16 3, 14 Symbol FB HYST GND OUT1 CPB Function Feedback Input Hysteresis I/O Ground Power Output 1 Current Peak Blanking Input Power Supply Voltage Power Output 2 Range Input Reference Input Not connected
VS
OUT2 RANGE REF N.C.
Semiconductor Group
2
1998-02-01
TLE 4206
TLE 4206G RANGE 13 RangeAMP
VS 8
HalfBridge 6 OUT1
REF FB
14 1 ServoAMP Protection and Logic HalfBridge 9 2 HystAMP 7 CPB 3,4,5, 10,11,12 GND
AEB02258
OUT2
HYST
Figure 2
Block Diagram (Pin numbers are valid for TLE 4206 G in P-DSO-14-4)
Semiconductor Group
3
1998-02-01
TLE 4206
Absolute Maximum Ratings Parameter Symbol Limit Values min. Voltages Supply voltage Supply voltage Logic input voltages (FB, REF, RANGE, HYST, CPB) Currents Output current (OUT1, OUT2) IOUT Output current (Diode) Input current (FB, REF, RANGE, HYST) Temperatures Junction temperature Storage temperature Thermal Resistances Junction pin (P-DSO-14-4) Junction ambient (P-DSO-14-4) Junction pin (P-DSO-16-5) Junction ambient (P-DSO-16-5) - -1 -2 -6 - 1 2 6 A A mA mA internally limited - max. Unit Remarks
VS VS VI
- 0.3 -1 - 0.3
45 - 20
V V V
-
t < 0.5 s; IS > - 2 A
-
IOUT IIN
t < 2 ms; t/T < 0.1
Tj Tstg
- 40 - 50
150 150
C C
- -
Rthj-pin RthjA Rthj-pin RthjA
- - - -
25 65 15 60
K/W K/W K/W K/W
measured to pin 5 - measured to pin 5 -
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Semiconductor Group
4
1998-02-01
TLE 4206
Operating Range Parameter Supply voltage Symbol Limit Values min. max. 18 V V V A A C After VS rising above VUV ON Outputs in tristate Outputs in tristate - - - 8 - 0.3 - 0.3 - 0.8 - 50 - 40 Unit Remarks
VS
Supply voltage increasing VS Supply voltage decreasing VS Output current Input current (FB, REF) Junction temperature
VUV ON VUV OFF
0.8 500 150
IOUT1-2 IIN Tj
Semiconductor Group
5
1998-02-01
TLE 4206
Electrical Characteristics 8 V < VS < 18 V; IOUT1-2 = 0 A; - 40 C < Tj < 150 C (unless otherwise specified) Parameter Symbol Limit Values min. Current Consumption Supply current Supply current Supply current typ. max. Unit Test Condition
IS IS IS
- - -
12 20 30
20 30 50
mA - mA IOUT1 = 0.4 A IOUT2 = - 0.4 A mA IOUT1 = 0.8 A IOUT2 = - 0.8 A
Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF Hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF Hysteresis
VUV ON VUV OFF VUVHY VOV OFF VOV ON VOVHY
- 6 - - 17.5 -
7.4 6.9 0.5 20 0.5
8 - - - -
V V V V V V
20.5 23
VS increasing VS decreasing VUV ON - VUV OFF VS increasing VS decreasing VOV OFF - VOV ON
Semiconductor Group
6
1998-02-01
TLE 4206
Electrical Characteristics (cont'd) 8 V < VS < 18 V; IOUT1-2 = 0 A; - 40 C < Tj < 150 C (unless otherwise specified) Parameter Symbol Limit Values min. Outputs OUT1-2 Saturation Voltages Source (upper ) IOUT = - 0.2 A Source (upper ) IOUT = - 0.4 A Sink (upper) IOUT = - 0.8 A Sink (lower) IOUT = 0.2 A Sink (lower) IOUT = 0.4 A Sink (lower) IOUT = 0.8 A Total drop Total drop Total drop typ. max. Unit Test Condition
VSAT U VSAT U VSAT U VSAT L VSAT L VSAT L
- - - - - -
0.85 1.15 V 0.90 1.20 V 1.10 1.50 V 0.15 0.23 V 0.25 0.40 V 0.45 0.75 V
Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C
IOUT = 0.2 A IOUT = 0.4 A IOUT = 0.8 A
VSAT VSAT VSAT
- - -
1.0 1.2 1.6
1.4 1.7 2.5
V V V
VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L
Clamp Diodes Forward voltage; upper Upper leakage current Forward voltage; lower
VFU ILKU VFL
- - -
1 - 0.9
1.5 5 1.4
IF = 0.4 A mA IF = 0.4 A V IF = 0.4 A
V
Semiconductor Group
7
1998-02-01
TLE 4206
Electrical Characteristics (cont'd) 8 V < VS < 18 V; IOUT1-2 = 0 A; - 40 C < Tj < 150 C (unless otherwise specified) Parameter Symbol Limit Values min. Input-Interface Input REF Quiescent voltage Input resistance Input FB Quiescent voltage Input resistance Input/Output HYST Current Amplification AHYST = IHYST / (IREF - IFB) typ. max. Unit Test Condition
VREFq RREF
- -
200 - 6 -
mV IREF = 0 A k 0 V < VREF < 0.5 V
VFBq RFB
- -
200 - 6 -
mV IFB = 0 A k 0 V < VFB < 0.5 V
AHYST
0.8
0.95 1.1
-
- 20 A < IHYST < - 10 A; 10 A < IHYST < 20 A; IREF = 250 A VHYST = VS / 2
Current Offset Threshold voltage High Deadband voltage High Deadband voltage Low Threshold voltage Low Hysteresis Window Deadband Window
IHYSTIO VHYH / VS VDBH / VS VDBL / VS VHYL / VS VHYW / VS VDBW / VS
-2 - - - - 3 0.4
0.5 52
3 -
A % % % % % %
IREF = IFB = 250 A VHYST = VS / 2
- - - - (VHYH - VHYL)/ VS (VDBH - VDBL)/ VS
50.4 - 49.6 - 48 4 0.8 - 5 1.2
Semiconductor Group
8
1998-02-01
TLE 4206
Electrical Characteristics (cont'd) 8 V < VS < 18 V; IOUT1-2 = 0 A; - 40 C < Tj < 150 C (unless otherwise specified) Parameter Symbol Limit Values min. Input RANGE Input current Switch-OFF voltage High Switch-OFF voltage Low typ. max. Unit Test Condition
IRANGE VOFFH VOFFL
-1 300
-
1 100
A
0 V < VRANGE < VS
- 100 0
mV refer to VS mV refer to GND
400 500
Input CPB (Current Peak Blanking) Charge current Low voltage High voltage threshold Clamp voltage Blanking time Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis
ICPBCH VCPBL VCPBH VCPBC tCPB
- - 5 - -
6.5 20 5.7 6.2 40
- 100 6.5 - -
A
VHYL > VHYST; VCPB = 0 V mV VHYL < VHYST < VHYH V VHYL > VHYST V VHYL > VHYST ms CCPB = 47 nF
TjSD TjSO
T
150 120 -
175 200 - 30 170 -
C C K
- - -
Semiconductor Group
9
1998-02-01
TLE 4206
+VB
+VB Dr 1N4001
CS
470 nF Dz
R HYH 100 k RR
50 k RANGE 13 RangeAMP
TLE 4206G
VS 8
36 V
HalfBridge 6 OUT1
R REF 1 k
VREFIN
R REF R FB 50 k
50 k
REF 14 FB 1 ServoAMP Protection and Logic HalfBridge 9 OUT2 HYST 2 HystAMP 7 CPB 3,4,5, 10,11,12 GND M
PFB
1 k
R HYL 100 k
GND
CCPB 47 nF
AES02259
Figure 3
Application Circuit (Pin numbers are valid for TLE 4206G in P-DSO-14-4)
Semiconductor Group
10
1998-02-01
TLE 4206
VMotor = VOUT1 - VOUT2
Motor Status
Turn CW
-2.0%
-0.4% 0.4% 2.0%
(VREF -VFB )/VS
Brake
Turn CCW
DBW DBL HYW HYL Expressions: HY = Hysteresis DB = Deadband H = High L = Low W = Window HYH
AED02260
DBH
Figure 4
Hysteresis, Phaselag and Deadband-Definitions
Semiconductor Group
11
1998-02-01
TLE 4206
VOFFH
VS(t )
VHYH VDBH VDBL VHYL VREF(t ) VOFFL t Start-Command Stop-Command VCPBC VCPB(t ) VCPBH VFB(t )
VCPBL VOUT2 H
L
t CPB t CPB
t CPB
t CPB
t Blanking-Time
t
Brake CCW Brake CW Brake CW Brake CCW Motor Status
VOUT1 H
L
t
Testconditions: VS = VB ; no revers polarity voltage diode R HYH = R HYL = 100 k ; R REF = R FB = 50 k
AED02314
Figure 5
Timing and Phaselag
Semiconductor Group
12
1998-02-01
TLE 4206
Package Outlines P-DSO-14-4 (Plastic Dual Small Outline Package)
0.35 x 45
1.75 max 1.45 -0.2
0.19 +0.06
0.2 -0.1
4 -0.2
1)
1.27 0.35 +0.15 2) 14 0.1 0.2 14x 6 0.2 8 0.4 +0.8
1 7 8.75 -0.21) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side
GPS05093
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device
8 max.
Dimensions in mm
Semiconductor Group
13
1998-02-01
TLE 4206
P-DIP-16-5 (Plastic Dual In-line Package)
4.37 max
0.38 min
7.87 0.38
2.54 0.46 0.1
1.7 max 0.25 16x 16 9
3.25 min
0.25 +0.1 6.35 0.25 1) 8.9 1
1
19.05 0.25 1)
8
Index Marking 1) Does not include plastic or metal protrusion of 0.25max per side
GPD05585
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Semiconductor Group 14
Dimensions in mm 1998-02-01

▲Up To Search▲

Price & Availability of TLE4206

	To Download TLE4206 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .